| 초록 |
As one of future non-volatile memories, resistive switching memories(ReRAM) have been expected to replace current NAND flash memory based on charge trapping, due to minimal device structure of two-terminals. On the other hand, sneak current inevitably occurring in ReRAM array still remains problematic. One possible solution is asymmetric resistive switching cells operating at low current level, which intrinsically suppresses the stray current. Among various resistive switching materials, HfOx has been extensively studied and yet systematic investigation has not been made on low-current resistive switching behavior of the HfOx layer with various reactive metals in order to result in the asymmetric switching characteristics. In this study, the role of different reactive metals on the low-powered asymmetric behavior will be disclosed in terms of switching current and reliability characteristics. |
