| 학회 | 한국재료학회 |
| 학술대회 | 2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 | 10권 1호 |
| 발표분야 | Display |
| 제목 | Deuterium Plasma처리가 저온 다결정 실리콘 TFT 안정성에 미치는 영향 |
| 초록 | There are marked consideration on display equipment as the needs for large-size and high resolution device is increased. Especially AMLCD using hydrogenated amorphous silicon (a-Si:H) has leaded the market The Advantages of a-Si:H TFTs were its simplicity and low temperature process, however relatively low mobility of a-Si:H limits application to high resolution display. whereas poly silicon has about 100 times larger than that of a-Si:H, it is possible to make TFTs module without peripheral driver IC, which may be realize SOG (silicon on glass). To realize SOG and faster device, there are more needs to scale down TFTs device to achieve a high speed and low voltage but Reduced TFTs, particularly reducing channel length, has the problem of process uniformity and high threshold voltage and leakage current due to trap within grain boundary Until now, Hydrogenation became known as optimized method to terminate defect and enhance electrical performance but Currently studys on deuterium exhibit superior performance than hydrogenated TFTs In this study, Poly crystalline Si TFTs are fabricated by MIC(Metal induced crystallization) that have the minimum channel length 2μm. We performed two kind of subjects, one is the novel surface plasma deuterium passivation on poly-crystalline silicon and the other is comparative analysis on conventional hydrogen and deuterium plasma treatment. Surface analysis data from AFM and AES, wetting angle showed rougher morphology in deuterated surface of poly silicon due to deuterium atom bombardment and a increase in hydrophilic characteristics from the competition between Si-CH3 and Si-OH bond and cleaning effect by deuterium atoms bombardment respectively. The deuterium distribution of inner poly silicon was characterized by SIMS analysis. we can deduce that poly silicon surface was passivated by deuterium through measured SIMS data To evaluate TFTs device reliability, BTS(Bias Temperature stressing) test was carried out, TFTs devices down to 2μm were electrically stressed for max 1000sec at room temperature, from parameter variation such like s-factor, leakage current, on/off ratio, we conclude that proposed surface deuterium plasma treatment suppress the hot carrier effect and improves stability of TFTs devices |
| 저자 | 정영균, 박원규, 남영민, 손송호, 김동환 |
| 소속 | 고려대 |
| 키워드 | TFT-LCD; 박막; Deuterium Plasma; 다결정 실리콘 |
