| 학회 |
한국고분자학회 |
| 학술대회 |
2006년 봄 (04/06 ~ 04/07, 일산킨텍스) |
| 권호 |
31권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Synthesis and Application of Polymer Containing Photo-acid Generator for Atomic Force Microscope Lithography |
| 초록 |
Photoacid generators (PAGs) have been widely used as a key component for a chemically amplified photoresist. The PAG monomer containing an arylsulfonium triflate group was synthesized and its polymerization behavior was investigated by radical homopolymerization and copolymerization with various methacrylates. These synthesized polymers were characterized for use in atomic force microscope (AFM) lithography. Due to the electron withdrawing group of PAG itself, this polymer could be a good candidate for high speed AFM lithography. The molecular weight and the content of PAG were controlled for improving thermal stability and sensitivity for AFM lithography. Based on this concept, the fabrication of anodization patterns will be achieved at the low bais voltage and the high speed of AFM lithographic patterning. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed. |
| 저자 |
권기진, 장유진, 안석훈, 이해원
|
| 소속 |
한양대 |
| 키워드 |
photoacid generator; AFM; lithography
|
| E-Mail |
|
