초록 |
One of the major challenges in the field of polymer semiconductors is an unbalanced advances between p-type (hole-transporting) and n-type (electron-transporting) polymers. Most notable advances have been made in p-type polymers which have enabled the development of high-performance p-channel organic field-effect transistors (OFETs) as well as efficient fullerene-based organic photovoltaics (OPVs). In contrast, n-type polymers remain relatively scarce and consequently the performance of n-channel OFETs and all-polymer solar cells has lagged far behind of p-channel OFETs and fullerene-based OPVs. To overcome this challenge, new n-type polymer semiconductors were developed based on a strong electron withdrawing naphthalene diimide (NDI) with various selenophene derivatives as co-monomers. The resulting highly crystalline poly(naphthalene diimide)s gave the electron mobility of 0.24 cm2/Vs in OFET measurements in air, and over 7 % of efficiency in all-polymer solar cells as an acceptor. |