| 초록 |
III-nitride-based nanowire structures has been used in a variety of optoelectronic devices. Compared to traditional planar structure, nanowire structures have various advantages, including dislocation densities, efficient heat dissipation, and reduced polarization field. One of the important parameters for achieving III-nitride-based high-efficiency device is to control p-type doping elements such as Magnesium. However, it is very difficult to understand the mechanisms of structure formation and growth by Mg in InGaN nanowire heterogeneous structures. So, here we report high quality p-i-n nanowire heterostructure fabricated using selective area epitaxial growth (SAG). Formed p-GaN nanostructure under different Mg doping growth conditions, various structure formation and Mg incorporations have been identified by scanning electron microscopy and cathodoluminescence analysis. The growth process of p-GaN formation in nanowires has been proposed via p-GaN nanostructure on InGaN nanowires, demonstrating the potential for realizing various nanoscale optoelectrionic devices. |
