| 초록 |
The growth mechanisms of SiC films on Si substrate was investigated by analysinggas phase, interface, and grown films using various analytic techniques. The tight bindingmethod of density functional theory was employed to clearly show the initial growth of SiCfilm on Si in atomic scale. The effective reactive species for the growth of 3C-SiC turnedout to be gaseous Si atoms and methyl radicals in this growth system. The mechanism ofvoid formation at SiC/Si interface was also proposed in this study.
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