| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
The investigation of plasma pre-treatment for Ru deposition by plasma enhanced atomic layer deposition |
| 초록 |
We investigated the effects of plasma pretreatment on SiO2 substrate for ruthenium deposition by remote plasma atomic layer deposition. Bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] was used as a Ru precursor and ammonia plasma was used as a reactant. During the deposition process of Ru thin film, the initial transition region usually observed before continuous film formation. In ALD, the number of cycles required to obtain a continuous film and it was reduced to about 35 cycles on the Ar plasma-treated SiO2 substrates. The deposition rate exhibited linearity after the initial transition region and the deposition rates were similar on both the treated and untreated SiO2 about 1.7 Å / cycle at 400 °C. A very low content of oxygen was detected in the Ru films from the Auger electron spectroscopy (AES) spectrum and about 9% carbon was observed by the Rutherford backscattering spectrometer (RBS). The transition region of Ru cluster growth on Ar plasma-treated SiO2 was investigated with transmission electron microscopy (TEM). Most of the Ru clusters were larger and better crystallized on the Ar plasma treated SiO2 than on untreated SiO2. And according to the scotch-tape test, Ar plasma treatment negatively affected the adhesion properties. The Ar plasma-treated SiO2 contained more amine groups and less hydroxyl groups on the surface compared with untreated SiO2. Auger spectra exhibited chemical shifts by Ru-O bonding, and larger shifts were observed on untreated substrates due to the strong adhesion of Ru films. |
| 저자 |
김진호, 박진규, 전희영, 김현정, 장우출, 전형탁
|
| 소속 |
한양대 |
| 키워드 |
Ruthenium (Ru); atomic layer deposition; plasma treatment
|
| E-Mail |
|
