| 초록 |
Surface disorder engineering is a plausible approach to enhance the photoelectrochemical performances of TiO2. Herein, we report a rapid reduction process (within 5 seconds) at room temperature that allows forming of an ultra-thin disordered layer on the surface of BiVO4 nanoparticles using a specific solution with controllable reducing power. The disordered layer on BiVO4 alleviates charge recombination at the electrode/electrolyte interface and greatly reduces the on-set potential, which in turn results in a photocurrent density of around 2.3 mA/cm2 at 1.23 V vs. RHE, which is 2.1 times higher than that of bare BiVO4. The enhanced photoactivity is attributed to the increased charge separation and transfer efficiencies, which provide an effective avenue for resolving an intrinsic drawback of bare BiVO4 such as short hole diffusion length of around 100 nm and poor surface oxygen evolution reactivity. |
