| 학회 |
한국재료학회 |
| 학술대회 |
2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 |
24권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Antireflection structures on silicon substrates in near-infrared region using AlOx/TiOx bilayer grown by atomic layer deposition |
| 초록 |
Antireflection (AR) layers on Si were investigated for potential application in optical communication in the wavelength range of 1270–1330 nm. Essential Macleod program was used to find the optimal thickness of the AR structures using AlOx/TiOx bilayer schemes. Achievement of the reflectance less than 0.5% was simulated using AlOx/TiOx AR structures. For experimental demonstration, atomic layer deposition (ALD) was used for the growth of AlOx and TiOx. Average reflectance of 0.2% was achieved in the wavelength ranging from 1270–1330 nm using ALD-AlOx/TiOx on Si. Despite the low reflectance of 0.2%, transmittance of ~88%, which is slightly lower than expected, was obtained. Additional air annealing at 300 oC for 2 hr enabled the crystallization of amorphous TiOx into anatase phase and it led to the improvement in transmittance up to ~99%. X-ray photoelectron spectroscopy analysis revealed that the oxidation state of Ti in TiOx influences the absorption in the near-IR region. |
| 저자 |
Yong Tae Kim1, Jaeyeong Heo2
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| 소속 |
1Department of Materials Science and Engineering and Optoelectronics Convergence Research Center, 2Chonnam National Univ. |
| 키워드 |
AlO<SUB>x</SUB>; TiO<SUB>x</SUB>; atomic layer deposition; anti-reflection coating; X-ray photoelectron spectroscopy
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| E-Mail |
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