| 초록 |
Visible and near-infrared (IR) broadband photodetectors are widely used in optical communications, imaging, security, and consumer electronics. Unlike Pb-based perovskites, which cannot be tuned to below 1.48 eV, Pb-Sn mixed halide perovskites exhibit low bandgaps of 1.2-1.3 eV. Due to the low bandgap, these Pb-Sn perovskite can absorb light till 1000nm making them a viable alternative to Silicon as the broadband photodetectors. However, the low-bandgap nature of Pb-Sn perovskites also causes large levels of electron and hole injection from anode and cathode, thus leading to high dark current. In this work, solution-processed NiOx are used as an electron blocker of Pb-Sn perovskite photodetectors instead of traditional PEDOT:PSS. |
