| 초록 |
Indium gallium zinc oxide (IGZO) is considered as best candidate semiconductor material with high mobility and high transparency. IGZO can be deposited by sol-gel process, which has many advantages such as simple fabrication of process, low-cost process, and large-area deposition. In addtion, solution process allows to deposite thin films without vacuum system. We fabricated IGZO TFTs with Ag NWs and ITO-NPs hybrid electrodes as source and drain. ITO-NPs layer were located under/over Ag NWs and electrical characteristics were improved by employing ITO-NPs. When we used Ag NWs as source and drain electrodes, mobility showed 4x10-3 cm2/Vs. By employing ITO-NPs under/over Ag NWs we confirmed that mobilities were significantly increased up to 2.09 cm2/Vs with ITO-NPs/Ag NWs/ITO-NPs structure. To investigate the effect of ITO-NPs we measured ultraviolet photoelectro spectroscopy (UPS) to find energy level of IGZO, Ag NWs, and ITO-NPs. We confirmed that interficial band bending between IGZO and ITO-NPs affects to decrease contact resistance in IGZO TFTs. We suggest decreased contact resistance results in improvement of charge injection and lead to improve electrical characteristics. |
