| 학회 |
한국화학공학회 |
| 학술대회 |
2009년 봄 (04/23 ~ 04/24, 광주 김대중컨벤션센터) |
| 권호 |
15권 1호, p.888 |
| 발표분야 |
재료 |
| 제목 |
Single ZnO Nanowire Based Field Effect Transistors (FETs) Fabricated by Back- and Top-Gate Approaches |
| 초록 |
The electrical properties of single ZnO nanowire were examined by fabricating single nanowire based field effect transistors (FETs) via two approaches, i.e. back- and top-gate approaches by using electron beam lithography (EBL) and photolithography processes. The ZnO nanowires were synthesized by non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The as-grown ZnO nanowires were characterized in terms of their structural and optical properties which confirmed that the grown nanowires are well-crystallized with the wurtzite hexagonal phase and exhibiting good optical properties. The peak transconductances of the back- and top-gate FETs were ~3.2 and ~7.4 nS, respectively. The field effect mobilities (eff) for the back- and top-gate FETs were measured to be 3.4 and 7.87 cm2/Vs, respectively. Our studies conclude that the fabricated top-gate FETs exhibited higher and good electrical properties as compared to ZnO nanowire FETs fabricated using back-gate approaches. |
| 저자 |
박용규, 김상훈, 아메드 우마르, 김진환, 한윤봉
|
| 소속 |
전북대 |
| 키워드 |
ZnO nanowire field effect transistors (FETs) |
| E-Mail |
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| 원문파일 |
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