| 1 |
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates
Pan L, Dong X, Li ZH, Luo WK, Ni JY
Applied Surface Science, 447, 512, 2018 |
| 2 |
Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
Rahman MNA, Yusuf Y, Mansor M, Shuhaimi A
Applied Surface Science, 362, 572, 2016 |
| 3 |
Temperature of InxGa1-xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates
Lion BW
Solar Energy Materials and Solar Cells, 114, 141, 2013 |
| 4 |
NH3-free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique
Saron KMA, Hashim MR, Farrukh MA
Journal of Crystal Growth, 349(1), 19, 2012 |
| 5 |
Surface characterization of AlGaN grown on Si (111) substrates
Pan X, Wang XL, Xiao HL, Wang CM, Feng C, Jiang LJ, Yin HB, Chen H
Journal of Crystal Growth, 331(1), 29, 2011 |
| 6 |
Design and fabrication of InxGa(1-x)N/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates
Liou BW
Thin Solid Films, 520(3), 1084, 2011 |
| 7 |
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
Wu JJ, Han XX, Li JM, Li DB, Lu Y, Wei HY, Cong GW, Liu XL, Zhu QS, Wang ZG
Journal of Crystal Growth, 279(3-4), 335, 2005 |
| 8 |
Epitaxial growth of high-quality GaN on appropriately nitridated Si substrate by metal organic chemical vapor deposition
Uen WY, Li ZY, Lan SM, Liao SM
Journal of Crystal Growth, 280(3-4), 335, 2005 |
| 9 |
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition
Wu JJ, Li DB, Lu Y, Han XX, Li JM, Wei HY, Kang TT, Wang XH, Liu XL, Zhu QS, Wang ZG
Journal of Crystal Growth, 273(1-2), 79, 2004 |
| 10 |
The growth morphologies of GaN layer on Si(111) substrate
Lu YA, Liu XL, Lu DC, Yuan HR, Hu GQ, Wang XH, Wang ZG, Duan XF
Journal of Crystal Growth, 247(1-2), 91, 2003 |
