| 1 |
Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Islam ME, Akabori M
Journal of Crystal Growth, 463, 86, 2017 |
| 2 |
Preheating temperature and growth temperature dependence of InP nanowires grown by self-catalytic VLS mode on InP substrate
Ogino T, Yamauchi M, Yamamoto Y, Shimomura K, Waho T
Journal of Crystal Growth, 414, 161, 2015 |
| 3 |
Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte
Sato T, Fujino T, Hasegawa H
Applied Surface Science, 252(15), 5457, 2006 |
| 4 |
Nitridation effects of GaP(111)B substrate on MOCVD growth of InN
Bhuiyan AG, Hashimoto A, Yamamoto A, Ishigami R
Journal of Crystal Growth, 212(3-4), 379, 2000 |
| 5 |
Growth and nonlinear optical properties of GaAs absorber layers for AlGaAs/CaF2 semiconductor saturable absorber mirrors
Schon S, Haiml M, Achermann M, Keller U
Journal of Vacuum Science & Technology B, 18(3), 1701, 2000 |
| 6 |
Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
Tereshchenko OE, Chikichev SI, Terekhov AS
Journal of Vacuum Science & Technology A, 17(5), 2655, 1999 |
| 7 |
Atomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs(111)B substrates
Tomich DH, Eyink KG, Seaford ML, Taferner WF, Tu CW, Lampert WV
Journal of Vacuum Science & Technology B, 16(3), 1479, 1998 |
| 8 |
GaAs Growth on (111)B Substrates by Molecular-Beam Epitaxy - A Study of the First Stages of Growth on Ultraviolet-Ozone Prepared Surfaces
Garcia BJ, Fontaine C, Yague AM
Journal of Vacuum Science & Technology B, 13(2), 281, 1995 |
| 9 |
Real-Time Scanning Microprobe Reflection High-Energy Electron-Diffraction Observations of III-V Growth During Molecular-Beam Epitaxy
Isu T, Morishita Y, Goto S, Nomura Y, Katayama Y
Journal of Vacuum Science & Technology A, 12(4), 1176, 1994 |
