검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
The effect of nitrogen on crystal growth of SiC on (11(2)over-bar0) substrates Nishiguchi T, Masuda Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 115, 2002 |
| 2 |
Temperature dependence of sublimation growth of 6H-SiC on (11(2)over-bar0) substrates Nishiguchi T, Masuda Y, Ohshima S, Nishino S Materials Science Forum, 389-3, 119, 2002 |
| 3 |
Recent achievements and future challenges in SiC homoepitaxial growth Kimoto T, Nakazawa S, Fujihira K, Hirao T, Nakamura S, Chen Y, Hashimoto K, Matsunami H Materials Science Forum, 389-3, 165, 2002 |
| 4 |
Epitaxial growth of (1120) 4H-SiC using substrate grown in the [1120] direction Kojima K, Ohno T, Senzaki J, Fukuda K, Fujimoto T, Katsuno M, Ohtani N, Nishino J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 195, 2002 |
| 5 |
Breakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiC Nakamura SI, Kumagai H, Kimoto T, Matsunami H Materials Science Forum, 389-3, 651, 2002 |
| 6 |
Crystal growth of 15R-SiC and various polytype substrates Nishiguchi T, Shimizu T, Sasaki M, Ohshima S, Nishino S Materials Science Forum, 353-356, 69, 2001 |