검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device Xu QX, Xu G, Zhou H, Zhu H, Liu J, Wang Y, Li J, Xiang J, Liang Q, Wu H, Zhong J, Xu M, Xu W, Ma X, Wang X, Tong X, Chen D, Yan J, Zhao C, Ye T Solid-State Electronics, 115, 26, 2016 |
| 2 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY Solid-State Electronics, 82, 82, 2013 |
| 3 |
Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY Solid-State Electronics, 86, 75, 2013 |
| 4 |
On the structure of the recessed-channel MOSFET for sub-100 nm SiCMOS Tao M, Varahramyan K Solid-State Electronics, 45(10), 1805, 2001 |