| 1 |
Electrical characteristics of Al2O3/TiO2/Al2O3 prepared by atomic layer deposition on (NH4)(2)S-treated GaAs
Yen CF, Lee MK, Lee JC
Solid-State Electronics, 92, 1, 2014 |
| 2 |
Characterization of enhancement-mode n-channel sulfur-treated InP MOSFET with Al2O3/TiO2 gate oxides prepared by atomic layer deposition
Yen CF, Lee MK
Solid-State Electronics, 100, 1, 2014 |
| 3 |
Performance improvement mechanisms of i-ZnO/(NH4)(2)S-x-treated AlGaN MOS diodes
Lee CT, Chiou YL, Lee HY, Chang KJ, Lin JC, Chuang HW
Applied Surface Science, 258(22), 8590, 2012 |
| 4 |
Low equivalent oxide thickness of TiO2/GaAs MOS capacitor
Yen CF, Lee MK
Solid-State Electronics, 73, 56, 2012 |
| 5 |
Micro-Raman spectroscopy of disordered and ordered sulfur phases on a passivated GaAs surface
Blachowicz T, Salvan G, Zahn DRT, Szuber J
Applied Surface Science, 252(21), 7642, 2006 |
| 6 |
High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)(2)S-x solution
Suzuki Y, Sanada N, Shimomura A, Fukuda Y
Applied Surface Science, 235(3), 260, 2004 |
| 7 |
Pyrite (FeS2) thin films prepared by spray method using FeSO4 and (NH4)(2)S-x
Yamamoto A, Nakamura M, Seki A, Li EL, Hashimoto A, Nakamura S
Solar Energy Materials and Solar Cells, 75(3-4), 451, 2003 |
