검색결과 : 7건
No. | Article |
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1 |
Adsorption and decomposition of H2S on InP(100) Hung WH, Chen HC, Chang CC, Hsieh JT, Hwang HL Journal of Physical Chemistry B, 103(18), 3663, 1999 |
2 |
A (NH4)(2)S-x-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy Ichikawa S, Suzuki Y, Sanada N, Utsumi N, Yamaguchi T, Gong XY, Fukuda Y Journal of Vacuum Science & Technology A, 17(2), 421, 1999 |
3 |
Reduction of Recombination Velocity on GaAs Surface by Ga-S and as-S Bond-Related Surface-States from (NH4)(2)S-X Treatment Sik H, Feurprier Y, Cardinaud C, Turban G, Scavennec A Journal of the Electrochemical Society, 144(6), 2106, 1997 |
4 |
Sulfur Contamination of (100)GaAs Resulting from Sample Preparation Procedures and Atmospheric Exposure Butcher KS, Egan RJ, Tansley TL, Alexiev D Journal of Vacuum Science & Technology B, 14(1), 152, 1996 |
5 |
Anodic Passivation of P-InP(100) in (NH4)(2)S-X Solution Gao LJ, Bardwell JA, Lu ZH, Graham MJ, Norton PR Journal of the Electrochemical Society, 142(1), L14, 1995 |
6 |
Reflectance Anisotropy Spectroscopy - A Probe for Surface-Chemistry on Na2S-Passivated and (NH4)(2)S-Passivated (001) GaAs Paget D, Berkovits VL, Gusev AO Journal of Vacuum Science & Technology A, 13(5), 2368, 1995 |
7 |
Surface-Topography and Composition of InP(100) After Various Sulfur Passivation Treatments Gao LJ, Anderson GW, Esposto F, Norton PR, Mason BF, Lu ZH, Graham MJ Journal of Vacuum Science & Technology B, 13(5), 2053, 1995 |