화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Adsorption and decomposition of H2S on InP(100)
Hung WH, Chen HC, Chang CC, Hsieh JT, Hwang HL
Journal of Physical Chemistry B, 103(18), 3663, 1999
2 A (NH4)(2)S-x-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy
Ichikawa S, Suzuki Y, Sanada N, Utsumi N, Yamaguchi T, Gong XY, Fukuda Y
Journal of Vacuum Science & Technology A, 17(2), 421, 1999
3 Reduction of Recombination Velocity on GaAs Surface by Ga-S and as-S Bond-Related Surface-States from (NH4)(2)S-X Treatment
Sik H, Feurprier Y, Cardinaud C, Turban G, Scavennec A
Journal of the Electrochemical Society, 144(6), 2106, 1997
4 Sulfur Contamination of (100)GaAs Resulting from Sample Preparation Procedures and Atmospheric Exposure
Butcher KS, Egan RJ, Tansley TL, Alexiev D
Journal of Vacuum Science & Technology B, 14(1), 152, 1996
5 Anodic Passivation of P-InP(100) in (NH4)(2)S-X Solution
Gao LJ, Bardwell JA, Lu ZH, Graham MJ, Norton PR
Journal of the Electrochemical Society, 142(1), L14, 1995
6 Reflectance Anisotropy Spectroscopy - A Probe for Surface-Chemistry on Na2S-Passivated and (NH4)(2)S-Passivated (001) GaAs
Paget D, Berkovits VL, Gusev AO
Journal of Vacuum Science & Technology A, 13(5), 2368, 1995
7 Surface-Topography and Composition of InP(100) After Various Sulfur Passivation Treatments
Gao LJ, Anderson GW, Esposto F, Norton PR, Mason BF, Lu ZH, Graham MJ
Journal of Vacuum Science & Technology B, 13(5), 2053, 1995