검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Buoyancy effect on the ultrafiltration of PEG 10,000. Visualization by digital holographic interferometry Fernandez-Sempere J, Ruiz-Bevia F, Salcedo-Diaz R, Garcia-Algado P, Garcia-Rodriguez M AIChE Journal, 58(12), 3810, 2012 |
| 2 |
Adsorptive studies of hazardous dye Tropaeoline 000 from an aqueous phase on to coconut-husk Jain R, Shrivastava M Journal of Hazardous Materials, 158(2-3), 549, 2008 |
| 3 |
Encapsulation of titanium dioxide in styrene/n-butyl acrylate copolymer by miniemulsion polymerization Al-Ghamdi GH, Sudol ED, Dimonie VL, El-Aasser MS Journal of Applied Polymer Science, 101(5), 3479, 2006 |
| 4 |
Characterization of oxide films on SIC epitaxial (000-1) faces by angle-resolved photoemission spectroscopy measurements using synchrotron radiation Hijikata A, Yaguchi B, Yoshida S, Takata Y, Kobayashi K, Shin S, Nohira H, Hattori T Materials Science Forum, 483, 585, 2005 |
| 5 |
4H-SiC lateral RESURF MOSFETs on carbon-face substrates Okamoto M, Suzuki S, Kato M, Yatsuo T, Fukuda K Materials Science Forum, 483, 805, 2005 |
| 6 |
High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face Danno K, Kimoto T, Matsunami H Materials Science Forum, 457-460, 197, 2004 |
| 7 |
Effect of atmospheres on the sintering behavior and microstructural evolution of (Ba0.87Ca0.13)(1.000)(Ti0.85Zr0.14Mn0.01)(1.003)O-3 Fang TT, Wu PH Materials Chemistry and Physics, 77(2), 346, 2003 |
| 8 |
Interface properties of MOS structures formed on 4H-SiC C(0001) face Fukuda K, Suzuki S, Senzaki J, Cho WJ, Tanaka T, Arai K Materials Science Forum, 353-356, 631, 2001 |
| 9 |
An analysis of endurance issues for MCFC Huijsmans JPP, Kraaij GJ, Makkus RC, Rietveld G, Sitters EF, Reijers HTJ Journal of Power Sources, 86(1-2), 117, 2000 |
| 10 |
Simulation of modern and glacial climates with a coupled global model of intermediate complexity Ganopolski A, Rahmstorf S, Petoukhov V, Claussen M Nature, 391(6665), 351, 1998 |