| 1 |
Equilibrium shape of steps and islands on polar CdTe(001) surface: application to the preparation of self organized templates for growth of nanostructures
Martrou D, Magnea N
Thin Solid Films, 367(1-2), 48, 2000 |
| 2 |
InAs quantum dots embedded in silicon
Hansen L, Bensing F, Waag A
Thin Solid Films, 367(1-2), 85, 2000 |
| 3 |
The heteroepitaxy of II-VI compounds on the non-isovalent substrates (ZnTe/Si)
Sidorov YG, Yakushev MV, Pridachin DN, Varavin VS, Burdina LD
Thin Solid Films, 367(1-2), 203, 2000 |
| 4 |
A (NH4)(2)S-x-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy
Ichikawa S, Suzuki Y, Sanada N, Utsumi N, Yamaguchi T, Gong XY, Fukuda Y
Journal of Vacuum Science & Technology A, 17(2), 421, 1999 |
| 5 |
Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
Tereshchenko OE, Chikichev SI, Terekhov AS
Journal of Vacuum Science & Technology A, 17(5), 2655, 1999 |
| 6 |
Formation and shape of InAs nanoparticles on GaAs surfaces
Bottomley DJ
Journal of Vacuum Science & Technology B, 17(2), 259, 1999 |
| 7 |
Texture and cross-sectional microstructure of MgO films grown on silicon dioxide by electron-beam evaporation
Lee JS, Ryu BG, Kwon HJ, Jeong YW, Kim HH
Thin Solid Films, 354(1-2), 82, 1999 |
| 8 |
Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy
Daweritz L, Schutzendube P, Reiche M, Ploog KH
Journal of Vacuum Science & Technology A, 16(3), 1969, 1998 |
| 9 |
Chemical and photochemical processes in sulfide passivation of GaAs(100) : In situ optical study and photoemission analysis
Berkovits VL, Ulin VP, Paget D, Bonnet JE, L'vova TV, Chiaradia P, Lantratov VM
Journal of Vacuum Science & Technology A, 16(4), 2528, 1998 |
| 10 |
In situ observations of nucleation and coalescence stages in Ge growth on Si surfaces using transmission electron microscope combined with molecular beam epitaxy chamber
Hiroyama Y, Tamura M
Journal of Vacuum Science & Technology A, 16(5), 2956, 1998 |
