| 1 |
Suppression of contact noise in a study on 1/f noise as a function of film thickness in Al-doped ZnO
Achahour A, Leroy G, Vandamme LKJ, Ayachi B, Duponchel B, Waldhoff N, Blary K, Vilcot JP
Thin Solid Films, 645, 70, 2018 |
| 2 |
Phosphorylation of rat brain purified mitochondrial Voltage-Dependent Anion Channel by c-Jun N-terminal kinase-3 modifies open-channel noise
Gupta R
Biochemical and Biophysical Research Communications, 490(4), 1221, 2017 |
| 3 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology
Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A
Solid-State Electronics, 128, 102, 2017 |
| 4 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results
Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A
Solid-State Electronics, 128, 109, 2017 |
| 5 |
Methodology for 1/f noise parameter extraction for high-voltage MOSFETs
Mavredakis N, Pflanzl W, Seebacher E, Bucher M
Solid-State Electronics, 103, 202, 2015 |
| 6 |
Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs
Kudina V, Garbar N, Simoen E, Claeys C
Solid-State Electronics, 105, 37, 2015 |
| 7 |
Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors
Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S
Solid-State Electronics, 111, 141, 2015 |
| 8 |
Investigation of voltage-controlled oscillator circuits using organic thin-film transistors (OTFT) for use in VCO-based analog-to-digital converters
Ganesan R, Krumm J, Ludwig K, Glesner M
Solid-State Electronics, 93, 8, 2014 |
| 9 |
Diameter dependence of 1/f noise in carbon nanotube field effect transistors using noise spectroscopy
Kawahara T, Yamaguchi S, Ohno Y, Maehashi K, Matsumoto K, Mizutani S, Itaka K
Applied Surface Science, 267, 101, 2013 |
| 10 |
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45 degrees rotated substrates
Doria RT, Martino JA, Simoen E, Claeys C, Pavanello MA
Solid-State Electronics, 90, 121, 2013 |
