검색결과 : 142건
No. | Article |
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1 |
Effect of stretching on the initial oxidation of 3C-SiC nanowire by first-principle simulation Cheng CY, Li HJ, Fu QG Applied Surface Science, 483, 170, 2019 |
2 |
Heteroepitaxial 3C-SiC on Si (100) with flow-modulated carbonization process conditions Li Y, Zhao ZF, Yu L, Wang Y, Yin ZJ, Li ZH, Han P Journal of Crystal Growth, 506, 114, 2019 |
3 |
Sulfur passivation of 3C-SiC thin film Su JN, Yang Y, Zhang XH, Wang H, Zhu LX Journal of Crystal Growth, 505, 15, 2019 |
4 |
Surface stabilities of 3C-SiC and H2O adsorption on the (110) surface Peng S, Jiang Y, Xu CH, Hu SL, Wang YL Journal of the American Ceramic Society, 102(10), 6256, 2019 |
5 |
Heteroepitaxial growth of thick 3C-SiC (110) films by Laser CVD Sun QY, Yang MJ, Li J, Xu QF, Tu R, Li QZ, Zhang S, Zhang LM, Goto T, Ohmori H, Kosinova M Journal of the American Ceramic Society, 102(8), 4480, 2019 |
6 |
Fine-grained 3C-SiC thick films prepared via hybrid laser chemical vapor deposition Lai YF, Cheng H, Jia ZL, Li QZ, Yang MJ, Zhang S, Han MX, Tu R, Goto T, Zhang LM Journal of the American Ceramic Society, 102(9), 5668, 2019 |
7 |
The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS Tengeler S, Kaiser B, Ferro G, Chaussende D, Jaegermann W Applied Surface Science, 427, 480, 2018 |
8 |
Protrusions reduction in 3C-SiC thin film on Si Zimbone M, Mauceri M, Litrico G, Barbagiovanni EG, Bongiorno C, La Via F Journal of Crystal Growth, 498, 248, 2018 |
9 |
High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition Sun QY, Zhu PP, Xu QF, Tu R, Zhang S, Shi J, Li HW, Zhang LM, Goto T, Yan JS, Li SS Journal of the American Ceramic Society, 101(3), 1048, 2018 |
10 |
Epitaxial growth of 3C-SiC on Si(111) and (001) by laser CVD Zhu PP, Yang MJ, Xu QF, Sun QY, Tu R, Li J, Zhang S, Li QZ, Zhang LM, Goto T, Shi J, Li HW, Ohmori H, Kosinova M, Basu B Journal of the American Ceramic Society, 101(9), 3850, 2018 |