화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 On the analogy of the potential barrier of trenched JFET and JBS devices
Bellone S, Di Benedetto L, Licciardo GD
Solid-State Electronics, 120, 6, 2016
2 A model of the off-behaviour of 4H-SiC power JFETs
Bellone S, Di Benedetto L, Licciardo GD
Solid-State Electronics, 109, 17, 2015
3 Structural, electrical and optical properties of bulk 4H and 6H p-type SiC
Kalinina EV, Zubrilov AS, Kuznetsov NI, Nikitina IP, Tregubova AS, Shcheglov MP, Bratus VY
Materials Science Forum, 338-3, 497, 2000
4 MicroRaman and Hall effect study of n-type bulk 4H-SiC
Chafai M, Jimenez J, Martin E, Mitchel WC, Saxler A, Perrin R
Materials Science Forum, 338-3, 707, 2000