화학공학소재연구정보센터
검색결과 : 46건
No. Article
1 Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K
Applied Surface Science, 458, 512, 2018
2 GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation
Paszuk A, Supplie O, Kim B, Bruckner S, Nandy M, Heinisch A, Kleinschmidt P, Nakano Y, Sugiyama M, Hannappel T
Solar Energy Materials and Solar Cells, 180, 343, 2018
3 In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Paszuk A, Dobrich A, Koppka C, Bruckner S, Duda M, Kleinschmidt P, Supplie O, Hannappel T
Journal of Crystal Growth, 464, 14, 2017
4 Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment
Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M
Applied Surface Science, 328, 120, 2015
5 Influence of plasma composition on reflectance anisotropy spectra for in situ III-V semiconductor dry-etch monitoring
Barzen L, Kleinschmidt AK, Strassner J, Doering C, Fouckhardt H, Bock W, Wahl M, Kopnarski M
Applied Surface Science, 357, 530, 2015
6 Optical in situ calibration of Sb for growing disordered GaInP by MOVPE
Barrigon E, Barrutia L, Rey-Stolle I
Journal of Crystal Growth, 426, 71, 2015
7 Stable Alignment of Tautomers at Room Temperature in Porphyrin 2D Layers
Bussetti G, Campione M, Riva M, Picone A, Raimondo L, Ferraro L, Hogan C, Palummo M, Brambilla A, Finazzi M, Duo L, Sassella A, Ciccacci F
Advanced Functional Materials, 24(7), 958, 2014
8 Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
Hospodkova A, Pangrac J, Zikova M, Oswald J, Vyskocil J, Komninou P, Kioseoglou J, Florini N, Hulicius E
Applied Surface Science, 301, 173, 2014
9 In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
Barrigon E, Bruckner S, Supplie O, Doscher H, Rey-Stolle I, Hannappel T
Journal of Crystal Growth, 370, 173, 2013
10 Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy
Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K
Journal of Crystal Growth, 315(1), 16, 2011