검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Glass-Encapsulated Light Harvesters: More Efficient Dye-Sensitized Solar Cells by Deposition of Self-Aligned, Conformal, and Self-Limited Silica Layers Son HJ, Wang XW, Prasittichai C, Jeong NC, Aaltonen T, Gordon RG, Hupp JT Journal of the American Chemical Society, 134(23), 9537, 2012 |
| 2 |
Structural and optical properties of polar and non-polar ZnO films grown by MOVPE Zhu JJ, Aaltonen T, Venkatachalapathy V, Galeckas A, Kuznetsov AY Journal of Crystal Growth, 310(23), 5020, 2008 |
| 3 |
Iridium barriers for direct copper electrodeposition in damascene processing Josell D, Bonevich JE, Moffat TP, Aaltonen T, Ritala M, Leskela M Electrochemical and Solid State Letters, 9(2), C48, 2006 |
| 4 |
Iridium barriers for direct copper electrodeposition in damascene processing (vol 9, pg C48, 2006) Josell D, Bonevich JE, Moffat TP, Aaltonen T, Ritala M, Leskela M Electrochemical and Solid State Letters, 9(5), L4, 2006 |
| 5 |
Electrodeposition of Cu on Ru barrier layers for damascene processing Moffat TP, Walker M, Chen PJ, Bonevich JE, Egelhoff WF, Richter L, Witt C, Aaltonen T, Ritala M, Leskela M, Josell D Journal of the Electrochemical Society, 153(1), C37, 2006 |
| 6 |
Electrodeposition of Cu on Ru barrier layers for damascene processing (vol 153, pg C37, 2005) Moffat TP, Walker M, Chen PJ, Bonevich JE, Egelhoff WF, Richter L, Witt C, Aaltonen T, Ritala M, Leskela M, Josella D Journal of the Electrochemical Society, 153(3), L5, 2006 |
| 7 |
ALD of rhodium thin films from Rh(acac)(3) and oxygen Aaltonen T, Ritala M, Leskela M Electrochemical and Solid State Letters, 8(8), C99, 2005 |
| 8 |
Atomic layer deposition and characterization of HfO2 films on noble metal film substrates Kukli K, Aaltonen T, Aarik J, Lu J, Ritala M, Ferrari S, Harsta A, Leskela M Journal of the Electrochemical Society, 152(7), F75, 2005 |
| 9 |
Atomic layer deposition of iridium thin films Aaltonen T, Ritala M, Sammelselg V, Leskela M Journal of the Electrochemical Society, 151(8), G489, 2004 |
| 10 |
ALD of Ta(Si)N thin films using TDMAS as a reducing agent and as a Si precursor Alen P, Aaltonen T, Ritala M, Leskela M, Sajavaara T, Keinonen J, Hooker JC, Maes JW Journal of the Electrochemical Society, 151(8), G523, 2004 |