화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 HCl defect revelation in 200mm SiGe virtual substrates: A systematic study
Hartmann JM, Abbadie A
Thin Solid Films, 557, 110, 2014
2 Approaches in Wet Chemical Etching for Defect Delineation in Silicon-on-Insulator Substrates
Mahliss J, Hakim R, Abbadie A, Brunier F, Kolbesen BO
Journal of the Electrochemical Society, 158(2), D107, 2011
3 Impact of the H-2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si
Hartmann JM, Abbadie A, Barnes JP, Fedeli JM, Billon T, Vivien L
Journal of Crystal Growth, 312(4), 532, 2010
4 Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)
Destefanis V, Hartmann JM, Abbadie A, Papon AM, Billon T
Journal of Crystal Growth, 311(4), 1070, 2009
5 Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structures
Abbadie A, Allibert F, Brunier F
Solid-State Electronics, 53(8), 850, 2009
6 Wet cleaning and surface characterization of Si1-xGex virtual substrates after a CMP step
Abbadie A, Hartmann JM, Besson P, Rouchon D, Martinez E, Holliger P, Di Nardo C, Campidelli Y, Billon T
Applied Surface Science, 254(21), 6793, 2008
7 Impact of the H-2 bake temperature on the structural properties of tensily strained Si layers on SiGe
Hartmann JM, Bogumilowciz Y, Abbadie A, Fillot F, Billon T
Journal of Crystal Growth, 310(10), 2493, 2008
8 Structural properties of tensile-strained Si layers grown on Si1-xGex virtual substrates (x=0.2, 0.3, 0.4 and 0.5)
Hartmann JM, Abbadie A, Rouchon D, Barnes JP, Mermoux M, Billon T
Thin Solid Films, 516(12), 4238, 2008
9 Study of HCl and secco defect etching for characterization of thick sSOI
Abbadie A, Bedell SW, Hartmann JM, Sadana DK, Brunier F, Figuet C, Cayrefourcq I
Journal of the Electrochemical Society, 154(8), H713, 2007
10 Low thermal budget surface preparation of Si and SiGe
Abbadie A, Hartmann JM, Holliger P, Semeria MN, Besson P, Gentile P
Applied Surface Science, 225(1-4), 256, 2004