화학공학소재연구정보센터
검색결과 : 156건
No. Article
1 REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL-DOPED GaN AND ZnO
Davies RP, Abernathy CR, Pearton SJ, Norton DP, Ivill MP, Ren F
Chemical Engineering Communications, 196(9), 1030, 2009
2 Rectifying ZnO:Ag/ZnO:Ga Thin-Film Junctions
Lugo FJ, Kim HS, Pearton SJ, Abernathy CR, Gila BP, Norton DP, Wang YL, Ren F
Electrochemical and Solid State Letters, 12(5), H188, 2009
3 Exhaled-breath detection using AlGaN/GaN high electron mobility transistors integrated with a Peltier element
Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ
Electrochemical and Solid State Letters, 11(3), J19, 2008
4 Studies of interface states in Sc2O3/GaN, MgO/GaN, and MgScO/GaN structures
Polyakov AY, Smirnov NB, Gila BP, Hlad M, Gerger AP, Abernathy CR, Pearton SJ
Journal of the Electrochemical Society, 154(2), H115, 2007
5 Dry etching of MgCaO gate dielectric and passivation layers on GaN
Hlad M, Voss L, Gila BP, Abernathy CR, Pearton SJ, Ren F
Applied Surface Science, 252(22), 8010, 2006
6 Novel dielectrics for gate oxides and surface passivation on GaN
Gila BP, Thaler GT, Onstine AH, Hlad M, Gerger A, Herrero A, Allums KK, Stodilka D, Jang S, Kang B, Anderson T, Abernathy CR, Ren F, Pearton SJ
Solid-State Electronics, 50(6), 1016, 2006
7 Effect of oxygen co-doping on the electronic and magnetic properties of Ga(1-x)MnxN
Thaler G, Frazier R, Gila B, Stapleton J, Davies R, Abernathy CR, Pearton SJ
Electrochemical and Solid State Letters, 8(1), G20, 2005
8 Electrical and optical properties of GaCrN films grown by molecular beam epitaxy
Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ
Journal of Vacuum Science & Technology B, 23(1), 1, 2005
9 Properties of (Ga, Mn)N with and without detectable second phases
Thaler GT, Frazier RM, Stapleton J, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Zavada JM
Electrochemical and Solid State Letters, 7(2), G34, 2004
10 Ferromagnetic AlGaCrP films by ion implantation
Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM
Electrochemical and Solid State Letters, 7(2), G44, 2004