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| No. | Article |
|---|---|
| 1 |
NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications Jang WW, Yoon JB, Kim MS, Lee JM, Kim SM, Yoon EJ, Cho KH, Lee SY, Choi IH, Kim DW, Park D Solid-State Electronics, 52(10), 1578, 2008 |