검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Ion beam synthesis of n-type doped SiC layers Serre C, Panknin D, Perez-Rodriguez A, Romano-Rodriguez A, Morante JR, Kogler R, Skorupa W, Esteve J, Acero MC Applied Surface Science, 184(1-4), 367, 2001 |
| 2 |
Structural and electrical characterization of ion beam synthesized and n-doped SiC layers Serre C, Panknin D, Perez-Rodriguez A, Romano-Rodriguez A, Morante Jr, Kogler R, Skorupa W, Esteve J, Acero MC Materials Science Forum, 353-356, 591, 2001 |
| 3 |
Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC: Structural characterization Romano-Rodriguez A, Perez-Rodriguez A, Serre C, Morante JR, Esteve J, Acero MC, Kogler R, Skorupa W, Ostling M, Nordell N, Karlsson S, Van Landuyt J Materials Science Forum, 338-3, 309, 2000 |
| 4 |
Synthesis of SiC Microstructures in Si Technology by High-Dose Carbon Implantation - Etch-Stop Properties Serre C, Perezrodriguez A, Romanorodriguez A, Calvobarrio L, Morante JR, Esteve J, Acero MC, Skorupa W, Kogler R Journal of the Electrochemical Society, 144(6), 2211, 1997 |
| 5 |
Etch-Stop Behavior of Buried Layers Formed by Substoichiometric Nitrogen Ion-Implantation into Silicon Perezrodriguez A, Romanorodriguez A, Morante JR, Acero MC, Esteve J, Montserrat J, Elhassani A Journal of the Electrochemical Society, 143(3), 1026, 1996 |