화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Brunner F, Bergunde T, Richter E, Kurpas P, Achouche M, Maassdorf A, Wurfl J, Weyers M
Journal of Crystal Growth, 221, 53, 2000
2 Characterization of Electrical Damage-Induced by CH4/H-2 Reactive Ion Etching of Molecular-Beam Epitaxial InAlAs
Achouche M, Clei A, Harmand JC
Journal of Vacuum Science & Technology B, 14(4), 2555, 1996