화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition
Hazbun R, Hart J, Hickey R, Ghosh A, Fernando N, Zollner S, Adam TN, Kolodzey J
Journal of Crystal Growth, 444, 21, 2016
2 Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers
Shinriki M, Chung K, Hasaka S, Brabant P, He H, Adam TN, Sadana D
Thin Solid Films, 520(8), 3190, 2012
3 Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates
Bedell SW, Adam TN, Turansky A, Sadana DK
Journal of Crystal Growth, 316(1), 101, 2011
4 Dry etching of SiGe alloys by xenon difluoride
Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E
Journal of Vacuum Science & Technology A, 26(3), 385, 2008