화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Molecular beam epitaxy growth of the dilute nitride GaAs1-xNx with a helical resonator plasma source
Zangenberg N, Beaton DA, Tiedje T, Tixier S, Adamcyk M, Kumaran R, MacKenzie JA, Nodwell E, Young EC, Sproule G
Journal of Vacuum Science & Technology A, 25(4), 850, 2007
2 Predicting GaAs surface shapes during MBE regrowth on patterned substrates
Ballestad A, Tiedje T, Schmid JH, Ruck BJ, Adamcyk M
Journal of Crystal Growth, 271(1-2), 13, 2004
3 Surfactant enhanced growth of GaNAs and InGaNAs using bismuth
Tixier S, Adamcyk M, Young EC, Schmid JH, Tiedje T
Journal of Crystal Growth, 251(1-4), 449, 2003
4 Faceting transition in epitaxial growth of dilute GaNAs films on GaAs
Adamcyk M, Tixier S, Ruck BJ, Schmid JH, Tiedje T, Fink V, Jeffries M, Karaiskaj D, Kavanagh KL, Thewalt M
Journal of Vacuum Science & Technology B, 19(4), 1417, 2001
5 Smoothing of textured GaAs surfaces during molecular beam epitaxy growth
Adamcyk M, Ballestad A, Pinnington T, Tiedje T, Davies M, Feng Y
Journal of Vacuum Science & Technology B, 18(3), 1488, 2000
6 Coherent soft x-ray scattering from InP islands on a semiconductor substrate
Adamcyk M, Nicoll C, Pinnington T, Tiedje T, Eisebitt S, Karl A, Scherer R, Eberhardt W
Journal of Vacuum Science & Technology B, 17(4), 1728, 1999