검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Low-temperature growth of epitaxial (100) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor Adarn TN, Bedell S, Reznicek A, Sadana DK, Venkateshan A, Tsunoda T, Seino T, Nakatsuru J, Shinde SR Journal of Crystal Growth, 312(23), 3473, 2010 |