화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes
Lachab M, Asif F, Zhang B, Ahmad I, Heidari A, Fareed Q, Adivarahan V, Khan A
Solid-State Electronics, 89, 156, 2013
2 Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions
Deng YQ, Islam MDM, Gaevski M, Yang ZJ, Adivarahan V, Khan A
Solid-State Electronics, 52(7), 1106, 2008
3 Low frequency noise in n-GaN with high electron mobility
Rumyantsev SL, Look DC, Levinshtein ME, Khan MA, Simin G, Adivarahan V, Molnar RJ, Shur MS
Materials Science Forum, 338-3, 1603, 2000