화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Role of buried cracks in mitigating strain in crack free GaN grown on Si (111) employing AlN interlayer schemes
Tang H, Baribeau JM, Aers GC, Fraser J, Rolfe S, Bardwell JA
Journal of Crystal Growth, 323(1), 413, 2011
2 Selective growth of InP/InGaAs < 010 > ridges: Physical and optical characterization
Poole PJ, Aers GC, Kam A, Dalacu D, Studenikin S, Williams RL
Journal of Crystal Growth, 310(6), 1069, 2008
3 Observation of resonant tunneling through a self-assembled InAs quantum dot layer
Aslan B, Liu HC, Gupta JA, Wasilewski ZR, Aers GC, Raymond S, Buchanan M
Journal of Vacuum Science & Technology A, 24(3), 704, 2006
4 Terahertz quantum cascade lasers: Fabrication, characterization, and doping effect
Ban D, Wachter M, Liu HC, Wasilewski ZR, Buchanan M, Aers GC
Journal of Vacuum Science & Technology A, 24(3), 778, 2006
5 Modified single missing air-hole defects in InAs/InP quantum dot membrane photonic crystal microcavities
Dalacu D, Frederick S, Lapointe J, Poole PJ, Aers GC, Williams RL
Journal of Vacuum Science & Technology A, 24(3), 791, 2006
6 Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence
McKay HA, Feenstra RM, Poole PJ, Aers GC
Journal of Crystal Growth, 249(3-4), 437, 2003
7 Properties of 1.3 mu m InGaNAs laser material grown by MBE using a N-2/Ar RF plasma
Gupta JA, Barrios PJ, Aers GC, Williams RL, Ramsey J, Wasilewski ZR
Solid-State Electronics, 47(3), 399, 2003
8 Self-assembled InAs quantum dots on InP nano-templates
Lefebvre J, Poole PJ, Fraser J, Aers GC, Chithrani D, Williams RL
Journal of Crystal Growth, 234(2-3), 391, 2002
9 Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (001) using an Ar/N-2 RF plasma
Gupta JA, Wasilewski ZR, Riel BJ, Ramsey J, Aers GC, Williams RL, Sproule GI, Perovic A, Perovic DD, Garanzotis T, SpringThorpe AJ
Journal of Crystal Growth, 242(1-2), 141, 2002
10 Tunable emission from InAs quantum dots on InP nanotemplates
Lefebvre J, Poole PJ, Aers GC, Chithrani D, Williams RL
Journal of Vacuum Science & Technology B, 20(5), 2173, 2002