화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGeHBTs
Liang QQ, Krithivasan R, Ahmed A, Lu Y, Li Y, Cressler JD, Niu GF, Rieh JS, Freeman G, Ahlgren D, Joseph A
Solid-State Electronics, 50(6), 964, 2006
2 The revolution in SiGe: impact on device electronics
Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S
Applied Surface Science, 224(1-4), 9, 2004
3 On the scaling limits of low-frequency noise in SiGeHBTs
Johansen JA, Jin ZR, Cressler JD, Cui Y, Niu GF, Liang QQ, Rieh JS, Freeman G, Ahlgren D, Joseph A
Solid-State Electronics, 48(10-11), 1897, 2004