검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy Zhou SX, Ai LK, Qi M, Wang SM, Xu AH, Guo Q Journal of Materials Science, 53(5), 3537, 2018 |
| 2 |
InGaAsBi materials grown by gas source molecular beam epitaxy Ai LK, Zhou SX, Qi M, Xu AH, Wang SM Journal of Crystal Growth, 477, 135, 2017 |
| 3 |
InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy Teng T, Xu AH, Ai LK, Sun H, Qi M Journal of Crystal Growth, 378, 618, 2013 |
| 4 |
InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy Teng T, Ai LK, Xu AH, Sun H, Zhu FY, Qi M Journal of Crystal Growth, 323(1), 525, 2011 |
| 5 |
Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors Xu AH, Qi M, Zhu FY, Sun H, Ai LK Journal of Crystal Growth, 301, 212, 2007 |