검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes Da XL, Guo X, Dong LM, Song YP, Ai WW, Shen GD Solid-State Electronics, 50(3), 508, 2006 |
| No. | Article |
|---|---|
| 1 |
The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes Da XL, Guo X, Dong LM, Song YP, Ai WW, Shen GD Solid-State Electronics, 50(3), 508, 2006 |