화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 First principles calculation of indium migration barrier energy on an InAs(001) surface
Fujiwara K, Ishii A, Aisaka T
Thin Solid Films, 464-65, 35, 2004
2 Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110)surfaces
Ishii A, Aisaka T, Oh JW, Yoshita M, Akiyama H, Pfeiffer LN, West KW
Thin Solid Films, 464-65, 38, 2004
3 Dynamics of In atom during InAs/GaAs(001) growth process
Ishii A, Fujiwara K, Aisaka T
Applied Surface Science, 216(1-4), 478, 2003
4 Role of As-2 molecules on Ga-terminated GaAs(001) surfaces during the MBE growth
Ishii A, Seino K, Aisaka T
Journal of Crystal Growth, 236(4), 511, 2002
5 Theoretical investigation of migration of group V adatoms on GaAs(001) surface
Seino K, Ishii A, Aisaka T
Journal of Crystal Growth, 237, 121, 2002