1 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI Journal of Crystal Growth, 507, 357, 2019 |
2 |
Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors Patrashin M, Akahane K, Sekine N, Hosako I Journal of Crystal Growth, 477, 86, 2017 |
3 |
Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method Akahane K, Yamamoto N, Kawanishi T Journal of Crystal Growth, 432, 15, 2015 |
4 |
Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxy Akahane K, Yamamoto N Journal of Crystal Growth, 378, 450, 2013 |
5 |
Wide-band emissions from highly stacked quantum dot structure grown using the strain-compensation technique Akahane K, Yamamoto N Journal of Crystal Growth, 323(1), 154, 2011 |
6 |
Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs (001) grown using different As species Takata A, Oshima R, Shoji Y, Akahane K, Okada Y Journal of Crystal Growth, 323(1), 158, 2011 |
7 |
Nano-crystalline Sb-based compound semiconductor formed on silicon Yamamoto N, Akahane K, Kawanishi T, Sotobayashi H Journal of Crystal Growth, 323(1), 431, 2011 |
8 |
Optical properties of stacked InAs self-organized quantum dots on InP (311)B Oshima R, Akahane K, Tsuchiya M, Shigekawa H, Okada Y Journal of Crystal Growth, 301, 776, 2007 |
9 |
Site control of very low density InAs QDs on patterned GaAs nano-wire surfaces Ueta A, Akahane K, Gozu S, Yamamoto N, Ohtani N, Tsuchiya M Journal of Crystal Growth, 301, 846, 2007 |
10 |
Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinement Ozua S, Akahane K, Yamamoto N, Ueta A, Ohtani N, Tsuchiya M Journal of Crystal Growth, 301, 955, 2007 |