검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Evaluation of substrate (Ni)-catalyzed electroless gold plating process Osaka T, Misato T, Sato J, Akiya H, Homma T, Kato M, Okinaka Y, Yoshioka O Journal of the Electrochemical Society, 147(3), 1059, 2000 |
| 2 |
Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing Machida K, Kyuragi H, Akiya H, Imai K, Tounai A, Nakashima A Journal of Vacuum Science & Technology B, 16(3), 1093, 1998 |
| 3 |
Observation of Defects in Thermal Oxides of Polysilicon by Transmission Electron-Microscopy Using Copper Decoration Itsumi M, Akiya H, Tomita M, Ueki T, Yamawaki M Journal of the Electrochemical Society, 144(2), 600, 1997 |
| 4 |
Electrical Characteristics of a WSix Contact Electrode with a Wsixn Diffusion Barrier Formed by Using Electron-Cyclotron-Resonance Plasma Nitridation Hirata A, Hosoya T, Machida K, Kyuragi H, Akiya H Journal of the Electrochemical Society, 144(11), 3993, 1997 |
| 5 |
On-Chip Decoupling Capacitance with High Dielectric-Constant and Strength Using SrTiO3 Thin-Films Electron-Cyclotron-Resonance-Sputtered at 400-Degrees-C Itsumi M, Ohfuji S, Tsukada M, Akiya H Journal of the Electrochemical Society, 144(12), 4321, 1997 |
| 6 |
Barrier Height Lowering and Instability of Gate Oxides Due to Dilute Hydrofluoric-Acid Pretreatment Akiya H, Itsumi M Journal of the Electrochemical Society, 143(3), 973, 1996 |
| 7 |
Copper Decoration Followed by TEM Observation Defects in the Buried Oxides of SOI Substrates Itsumi M, Omura Y, Imai K, Ueki T, Akiya H, Tomita M, Yamawaki M Journal of the Electrochemical Society, 143(7), 2357, 1996 |
| 8 |
Passivation of Sodium-Ions in Metal-Oxide-Semiconductor Structures by Annealing with Ultraviolet-Light Itsumi M, Akiya H, Nakayama S, Yoshino H Journal of the Electrochemical Society, 143(10), 3359, 1996 |
| 9 |
A Wsixn Diffusion Barrier Formed with Electron-Cyclotron-Resonance Nitrogen Plasma Hirata A, Hosoya T, Machida K, Takaoka H, Akiya H Journal of the Electrochemical Society, 143(11), 3747, 1996 |
| 10 |
Generation of Si-SiO2 Interface States at Surface-Potentials Near 0.4 and 0.7 eV Itsumi M, Shimaya M, Akiya H, Shiono N Journal of the Electrochemical Society, 143(11), 3757, 1996 |