검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus Rao S, Bergamini F, Nipoti R, Saddow SE Applied Surface Science, 252(10), 3837, 2006 |
| 2 |
Activation of implanted Al and co-implanted Al/C or Al/Si in 4H-SiC Jones KA, Zheleva TS, Ervin MH, Shah PB, Derenge MA, Gerardi G, Freitas JA, Vispute RD Materials Science Forum, 457-460, 929, 2004 |
| 3 |
The influence of substrate temperature on the evolution of ion implantation-induced defects in epitaxial 6H-SiC Anwand W, Brauer G, Wirth H, Skorupa W, Coleman PG Applied Surface Science, 194(1-4), 127, 2002 |
| 4 |
Improved p-type conductivity in heavily Al-doped SiC by ion-beam-induced nano-crystallization Heera V, Madhusoodanan KN, Mucklich A, Panknin D, Skorupa W Materials Science Forum, 433-4, 395, 2002 |
| 5 |
Real relationship between acceptor density and hole concentration in Al-implanted 4H-SiC Matsuura H, Sugiyama K, Nishikawa K, Nagata T, Fukunaga N Materials Science Forum, 433-4, 447, 2002 |
| 6 |
p-type doping of SiC by high dose Al implantation - Problems and progress Heera V, Panknin D, Skorupa W Applied Surface Science, 184(1-4), 307, 2001 |