검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface Yan DW, Lu H, Chen DJ, Zhang R, Zheng YD, Qian X, Li AD Solid-State Electronics, 72, 56, 2012 |
| 2 |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth Chang YH, Chiu HC, Chang WH, Kwo J, Tsai CC, Hong JM, Hong M Journal of Crystal Growth, 311(7), 2084, 2009 |