검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Structural and band gaps studies of novel Al2-xHfxO3 materials toward MOS applications Kamarulzaman N, Mahat AM, Badar N, Zhao CZ Materials Chemistry and Physics, 216, 237, 2018 |
| 2 |
Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator Ding XW, Qin CP, Xu T, Song JT, Zhang JH, Jiang XY, Zhang ZL Molecular Crystals and Liquid Crystals, 651(1), 235, 2017 |
| 3 |
2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Campabadal F, Ohyama H, Takakura K, Tsunoda I, Zabala M, Beldarrain O, Gonzalez MB, Garcia H, Castan H, Gomez A, Duenas S Solid-State Electronics, 79, 65, 2013 |
| 4 |
Characterization of Al2O3-HfO2-Al2O3 sandwiched MIM capacitor under DC and AC stresses Kwak HY, Kwon HM, Jung YJ, Kwon SK, Jang JH, Choi WI, Ha ML, Lee JI, Lee SJ, Lee HD Solid-State Electronics, 79, 218, 2013 |
| 5 |
Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafi JM, Gonzalez MB, Takakura K, Tsunoda I, Yoneoka M, Beldarrain O, Zabala M, Campabadal F Solid-State Electronics, 89, 198, 2013 |
| 6 |
Comparative study of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide Miyazaki E, Goda Y, Kishimoto S, Mizutani T Solid-State Electronics, 62(1), 152, 2011 |
| 7 |
Proximity-Scan ALD (PS-ALD) 에 의한 Al2O3와 HfO2 박막증착 기술 및 박막의 전기적 특성 권용수, 이미영, 오재응 Korean Journal of Materials Research, 18(3), 148, 2008 |
| 8 |
Fully integrated 512 Mb DRAMs with HSG-merged-AHO cylinder capacitor Kim SG, Hyun CS, Park D, Cho TH, Suk JG, Hong HS, Lee KY, Oh KS Solid-State Electronics, 50(6), 1030, 2006 |