검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Development of InAlAsSb growth by MOVPE Slocum M, Forbes DV, Hillier GC, Smith BL, Adams JGJ, Hubbard SM Journal of Crystal Growth, 471, 15, 2017 |
| 2 |
High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy Mozume T, Gozu S Journal of Crystal Growth, 311(7), 1707, 2009 |
| 3 |
Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy Mozume T, Kasai J, Nagase M, Simoyama T, Ishikawa H Journal of Crystal Growth, 301, 177, 2007 |
| 4 |
Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier layer composition Nagase M, Mozume T, Simoyama T, Hasama T, Ishikawa H Journal of Crystal Growth, 301, 240, 2007 |
| 5 |
Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy Mozume T, Kasai J Journal of Crystal Growth, 278(1-4), 178, 2005 |
| 6 |
Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers Kasai J, Mozume T Journal of Crystal Growth, 278(1-4), 183, 2005 |
| 7 |
Growth of AlAsSb/InGaAs MBE-layers for all-optical switches Cristea P, Fedoryshyn Y, Jackel H Journal of Crystal Growth, 278(1-4), 544, 2005 |
| 8 |
Wet oxidation of AlAsSb alloys catalyzed by methanol Salesse A, Hanfoug R, Rouillard Y, Genty F, Almuneau G, Chusseau L, Baranov A, Alibert C, Kieffer J, Lebeau E, Luck JM Applied Surface Science, 161(3-4), 426, 2000 |
| 9 |
Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice Georgiev N, Mozume T Journal of Crystal Growth, 209(2-3), 247, 2000 |
| 10 |
Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy Mozume T, Georgiev N, Nishimura T, Yoshida H, Nishikawa S, Neogi A Journal of Crystal Growth, 209(2-3), 445, 2000 |