| 1 |
High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components
Kulkova IV, Kadkhodazadeh S, Kuznetsova N, Huck A, Semenova ES, Yvind K
Journal of Crystal Growth, 402, 243, 2014 |
| 2 |
Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)
Enzmann R, Bareiss M, Baierl D, Hauke N, Bohm G, Meyer R, Finley J, Amann MC
Journal of Crystal Growth, 312(16-17), 2300, 2010 |
| 3 |
Wide temperature operational range of a 1310 nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coating
Wang CY, Hsu JC, Shiao HP
Solid-State Electronics, 53(9), 940, 2009 |
| 4 |
Variation of the morphology of strained AlGaInAs quantum wells with substrate orientation
Caneau C, Bhat R, Nishiyama N
Journal of Crystal Growth, 310(7-9), 2345, 2008 |
| 5 |
1.3 mu m AlGaInAs/AlGaInAs strain-compensated multiple-quantumwell index-coupled distribution feedback laser diodes
Lei PH
Solid-State Electronics, 51(6), 925, 2007 |
| 6 |
Metalorganic vapor phase epitaxy growth of AlGaInAs quantum dots on (100) GaAs substrate
Yuan HR, Dong JR, Jin CS, Wang YJ
Journal of Crystal Growth, 270(1-2), 50, 2004 |
| 7 |
MOVPE growth of AlGaInAs-InP highly tensile-strained MQWs for 1.3 mu m low-threshold lasers
Decobert J, Lagay N, Cuisin C, Dagens B, Thedrez B, Laruelle F
Journal of Crystal Growth, 272(1-4), 543, 2004 |
| 8 |
Highly selective growth of AlGaInAs assisted by CBr4 during MOCVD growth
Arakawa S, Itoh M, Kasukawa A
Journal of Crystal Growth, 221, 183, 2000 |
