검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 Tun CJ, Kuo CH, Fu YK, Kuo CW, Chou MMC, Chi GC Journal of Crystal Growth, 311(14), 3726, 2009 |
| 2 |
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application Wang XL, Chen TS, Xiao HL, Tang J, Ran JX, Zhang ML, Feng C, Hou QF, Wei M, Jiang LJ, Li JM, Wang ZG Solid-State Electronics, 53(3), 332, 2009 |
| 3 |
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz Wang XL, Chen TS, Xiao HL, Wang CM, Hu GX, Luo WJ, Tang J, Guo LC, Li JM Solid-State Electronics, 52(6), 926, 2008 |
| 4 |
Improvement of crystal quality of AlN and AlGaN epitaxial layers by controlling the strain with the (AlN/GaN) multi-buffer layer Niikura E, Murakawa K, Hasegawa F, Kawanishi H Journal of Crystal Growth, 298, 345, 2007 |
| 5 |
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure Wang CM, Wang XL, Hu GX, Wang JX, Li HP, Wang ZG Applied Surface Science, 253(2), 762, 2006 |