| 1 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Malik A, Sharma C, Laishram R, Bag RK, Rawal DS, Vinayak S, Sharma RK
Solid-State Electronics, 142, 8, 2018 |
| 2 |
Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures
Kim ZS, Lee HS, Na J, Bae SB, Nam E, Lim JW
Solid-State Electronics, 140, 12, 2018 |
| 3 |
High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors
Lee JM, Min BG, Ju CW, Ahn HK, Lim JW
Current Applied Physics, 17(2), 157, 2017 |
| 4 |
High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AIN spacer layer
Ko TS, Lin DY, Lin CF, Chang CW, Zhang JC, Tu SJ
Journal of Crystal Growth, 464, 175, 2017 |
| 5 |
Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs
Du JF, Wang K, Liu Y, Bai ZY, Liu Y, Feng ZH, Dun SB, Yu Q
Solid-State Electronics, 129, 1, 2017 |
| 6 |
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Ahmed N, Dutta AK
Solid-State Electronics, 132, 64, 2017 |
| 7 |
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
Wang H, Wang N, Jiang LL, Zhao HY, Lin XP, Yu HY
Solid-State Electronics, 137, 52, 2017 |
| 8 |
Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors
Dogar S, Khan W, Khan F, Kim SD
Thin Solid Films, 642, 69, 2017 |
| 9 |
Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate
Du JF, Chen NT, Jiang ZG, Bai ZY, Liu Y, Liu Y, Yu Q
Solid-State Electronics, 115, 60, 2016 |
| 10 |
The world's first high voltage GaN-on-Diamond power semiconductor devices
Baltynov T, Unni V, Narayanan EMS
Solid-State Electronics, 125, 111, 2016 |
