검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Reduction of leakage current by O-2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors Jiang Y, Wang QP, Zhang FZ, Li L, Zhou DQ, Liu Y, Wang DJ, Ao JP Applied Surface Science, 351, 1155, 2015 |
| 2 |
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Goswami A, Trew RJ, Bilbro GL Solid-State Electronics, 80, 23, 2013 |
| 3 |
Scalability of the drain-current drive of AlGaN/GaN HFETs with gate-length Sikder MJ, Valizadeh P Solid-State Electronics, 89, 105, 2013 |
| 4 |
Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer Kikuta D, Ao JP, Ohno Y Solid-State Electronics, 50(3), 316, 2006 |
| 5 |
Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps Guhel Y, Boudart B, Vellas N, Gaquiere C, Delos E, Ducatteau D, Bougrioua Z, Germain M Solid-State Electronics, 49(10), 1589, 2005 |
| 6 |
A high-power AlGaN/GaN heterojunction field-effect transistor Yoshida S, Ishii H, Li J, Wang DL, Ichikawa M Solid-State Electronics, 47(3), 589, 2003 |