검색결과 : 11건
No. | Article |
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1 |
Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier Kim JG, Kang SH, Janicki L, Lee JH, Ju JM, Kim KW, Lee YS, Lee SH, Lim JW, Kwon HS, Lee JH Solid-State Electronics, 152, 24, 2019 |
2 |
High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes Osvald J, Lalinsky T, Vanko G Applied Surface Science, 461, 206, 2018 |
3 |
Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE Hentschel R, Gartner J, Wachowiak A, Grosser A, Mikolajick T, Schmult S Journal of Crystal Growth, 500, 1, 2018 |
4 |
Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors Wang L, Bu YY, Li LA, Ao JP Applied Surface Science, 411, 144, 2017 |
5 |
Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy Shin JH, Kim KC, Kim KS Current Applied Physics, 15(11), 1478, 2015 |
6 |
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J Applied Surface Science, 312, 102, 2014 |
7 |
Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate Kim DS, Won CH, Kim RH, Lim BO, Choi GW, Lee BH, Kim HJ, Hong IP, Lee JH Journal of Crystal Growth, 395, 5, 2014 |
8 |
Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure Wang QP, Jiang Y, Miyashita T, Motoyama S, Li LA, Wang DJ, Ohno Y, Ao JP Solid-State Electronics, 99, 59, 2014 |
9 |
Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing Takimoto T, Takeshita K, Nakamura S, Okumura T Thin Solid Films, 557, 212, 2014 |
10 |
AlGaN/GaN power amplifiers for ISM applications Krausse D, Benkhelifa F, Reiner R, Quay R, Ambacher O Solid-State Electronics, 74, 108, 2012 |