화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier
Kim JG, Kang SH, Janicki L, Lee JH, Ju JM, Kim KW, Lee YS, Lee SH, Lim JW, Kwon HS, Lee JH
Solid-State Electronics, 152, 24, 2019
2 High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
Osvald J, Lalinsky T, Vanko G
Applied Surface Science, 461, 206, 2018
3 Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE
Hentschel R, Gartner J, Wachowiak A, Grosser A, Mikolajick T, Schmult S
Journal of Crystal Growth, 500, 1, 2018
4 Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors
Wang L, Bu YY, Li LA, Ao JP
Applied Surface Science, 411, 144, 2017
5 Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy
Shin JH, Kim KC, Kim KS
Current Applied Physics, 15(11), 1478, 2015
6 Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure
Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J
Applied Surface Science, 312, 102, 2014
7 Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate
Kim DS, Won CH, Kim RH, Lim BO, Choi GW, Lee BH, Kim HJ, Hong IP, Lee JH
Journal of Crystal Growth, 395, 5, 2014
8 Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure
Wang QP, Jiang Y, Miyashita T, Motoyama S, Li LA, Wang DJ, Ohno Y, Ao JP
Solid-State Electronics, 99, 59, 2014
9 Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing
Takimoto T, Takeshita K, Nakamura S, Okumura T
Thin Solid Films, 557, 212, 2014
10 AlGaN/GaN power amplifiers for ISM applications
Krausse D, Benkhelifa F, Reiner R, Quay R, Ambacher O
Solid-State Electronics, 74, 108, 2012